Abstract: With the development of switching devices toward high frequency, the prediction and calculation of magnetic material losses under high frequency have become increasingly important. Moreover, ...
Abstract: The reverse-conducting injection-enhanced gate transistor (RC-IEGT) is a device that has both p-type and n-type layers at the backside. It was found that the RC-IEGT has a weaker ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results